Based on years of sponsored research and development at OSU,
VisGate is developing circuit designs and solutions for next generation power semiconductor technologies,
Silicon Carbide (SiC) and Gallium Nitride (GaN),
featuring a unique gate drive design approach.
The goal of this technology is to improve safety and reliability of these new semiconductor technologies through novel design approaches
Application for this technology includes electrical vehicles, EV charging systems,
electrified aircraft, industrial motor drives and inverters for photovoltaics.